Mmp60r360p 3i4eb

MMP60R360P Datasheet

MMP60R360P 600V 0.36Ω N-channel MOSFET  Description MMP60R360P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These friendly devices give an advantage of Low EMI to designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

Value

Unit

VDS @ Tj,max

650

V

RDS(on),max

0.36

Ω

VTH,typ

3

V

ID

11

A

Qg,typ

28

nC

D

G G

D

S

S

 Features 

Low Power Loss by High Speed Switching and Low On-Resistance



100% Avalanche Tested



Green Package – Pb Free Plating, Halogen Free

 Applications 

PFC Power Supply Stages



Switching Applications



Adapter



Motor Control



DC – DC Converters

 Ordering Information Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMP60R360PTH

60R360P

-55 ~ 150℃

TO-220

Tube

Halogen Free

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MMP60R360P Datasheet

 Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter

Symbol

Rating

Unit

Drain – Source voltage

VDSS

600

V

Gate – Source voltage

VGSS

±30

V

11

A

TC=25℃

6.95

A

TC=100℃

Continuous drain current

ID

Pulsed drain current(1)

IDM

33

A

Power dissipation

PD

83

W

Single - pulse avalanche energy

EAS

220

mJ

MOSFET dv/dt ruggedness

dv/dt

50

V/ns

Diode dv/dt ruggedness

dv/dt

15

V/ns

Tstg

-55 ~150

℃

Tj

150

℃

Storage temperature Maximum operating junction temperature 1) 2)

Note

Pulse width tP limited by Tj,max ISD ≤ ID, VDS peak ≤ V(BR)DSS

 Thermal Characteristics Parameter

Symbol

Value

Unit

Thermal resistance, junction-case max

Rthjc

1.5

℃/W

Thermal resistance, junction-ambient max

Rthja

62.5

℃/W

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MMP60R360P Datasheet

 Static Characteristics (Tc=25℃ unless otherwise specified) Parameter

Symbol

Min.

Typ.

Max.

Unit

Drain – Source Breakdown voltage

V(BR)DSS

600

-

-

V

VGS = 0V, ID=0.25mA

VGS(th)

2

3

4

V

VDS = VGS, ID=0.25mA

Zero Gate Voltage Drain Current

IDSS

-

-

1

μA

VDS = 600V, VGS = 0V

Gate Leakage Current

IGSS

-

-

100

nA

VGS = ±30V,

RDS(ON)

-

0.32

0.36

Ω

VGS = 10V, ID = 3.8A

Gate Threshold Voltage

Drain-Source On State Resistance

Test Condition

VDS =0V

 Dynamic Characteristics (Tc=25℃ unless otherwise specified) Parameter

Symbol

Min.

Typ.

Max.

Input Capacitance

Ciss

-

890

-

Output Capacitance

Coss

-

670

-

Unit

pF Reverse Transfer Capacitance

Crss

-

40

-

Effective Output Capacitance Energy Related (3)

Co(er)

-

26

-

Turn On Delay Time

td(on)

-

18

-

tr

-

40

-

Rise Time Turn Off Delay Time

td(off)

-

80

-

tf

-

30

-

Total Gate Charge

Qg

-

28

-

Gate – Source Charge

Qgs

-

7

-

Gate – Drain Charge

Qgd

-

10

-

Gate Resistance

RG

-

3.5

-

Fall Time

Test Condition

VDS = 25V, VGS = 0V, f = 1.0MHz

VDS = 0V to 480V, VGS = 0V,f = 1.0MHz

ns

VGS = 10V, RG = 25Ω, VDS = 300V, ID = 11A

nC

VGS = 10V, VDS = 480V, ID = 11A

Ω

VGS = 0V, f = 1.0MHz

3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS

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MMP60R360P Datasheet

 Reverse Diode Characteristics (Tc=25℃ unless otherwise specified) Parameter

Symbol

Min.

Typ.

Max.

Unit

Continuous Diode Forward Current

ISD

-

-

11

A

Diode Forward Voltage

VSD

-

-

1.4

V

Reverse Recovery Time

trr

-

375

-

ns

Reverse Recovery Charge

Qrr

-

4.1

-

μC

Reverse Recovery Current

Irrm

-

21.8

-

A

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Test Condition

ISD = 11 A, VGS = 0 V

ISD = 11 A di/dt = 100 A/μs VDD = 100 V

MagnaChip Semiconductor Ltd.

MMP60R360P Datasheet



Characteristic Graph

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MMP60R360P Datasheet

Jun. 2013 Revision 1.1

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MagnaChip Semiconductor Ltd.

MMP60R360P Datasheet

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MMP60R360P Datasheet

 Test Circuit Same type as DUT

VGS

Qg

100KΩ 10V 10V +

Qgs

VDS

Qgd

1mA

DUT

10V Charge

Fig15-2. Gate charge waveform

Fig15-1. Gate charge measurement circuit

trr DUT

IFM

IF

0.5 IRM

+ V - DS IS

tb 0.25 IRM

di/dt

L

Rg 10KΩ

ta

0.75 IRM

IRM

+

Same type as DUT

VDD

VR

Vgs ± 15V

VRM(REC)

Fig16-1. Diode reverse recovery test circuit

Fig16-1. Diode reverse recovery test waveform

ID DUT VDS

VDS

Rg 25Ω 90%

RL

Vgs

10%

tp

+ VDD VGS

-

Td(on)

tr

Td(off)

ton

Fig17-1. Switching time test circuit for resistive load

tf

toff

Fig17-2. Switching time waveform

IAS DUT VDS

BVDSS tp

Rg L

Vgs

tAV IAS

VDD tp

VDS(t)

+ VDD Rds(on) * IAS

Fig18-1. Unclamped inductive load test circuit Jun. 2013 Revision 1.1

Fig18-2. Unclamped inductive waveform 8

MagnaChip Semiconductor Ltd.

MMP60R360P Datasheet  Physical Dimensions 3 Leads, TO-220 Dimensions are in millimeters unless otherwise specified

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MagnaChip Semiconductor Ltd.

MMP60R360P Datasheet

DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a ed trademark of MagnaChip Semiconductor Ltd.

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